Issue 48, 2019

Correction: High-performance UV detectors based on room-temperature deposited amorphous Ga2O3 thin films by RF magnetron sputtering

Abstract

Correction for ‘High-performance UV detectors based on room-temperature deposited amorphous Ga2O3 thin films by RF magnetron sputtering’ by Shun Han et al., J. Mater. Chem. C, 2019, 7, 11834–11844.

Associated articles

Article information

Article type
Correction
Submitted
21 Nov 2019
Accepted
21 Nov 2019
First published
03 Dec 2019
This article is Open Access
Creative Commons BY license

J. Mater. Chem. C, 2019,7, 15383-15383

Correction: High-performance UV detectors based on room-temperature deposited amorphous Ga2O3 thin films by RF magnetron sputtering

S. Han, X. Huang, M. Fang, W. Zhao, S. Xu, D. Zhu, W. Xu, M. Fang, W. Liu, P. Cao and Y. Lu, J. Mater. Chem. C, 2019, 7, 15383 DOI: 10.1039/C9TC90256B

This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. You can use material from this article in other publications without requesting further permissions from the RSC, provided that the correct acknowledgement is given.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements