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Fe doping-stabilized γ-Ga2O3 thin films with a high room temperature saturation magnetic moment

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Abstract

Saturation magnetic moment (Msm) is a key evaluation parameter of diluted magnetic semiconductors (DMSs). The higher the Msm, the more widespread the applications of electron spin for non-volatile information manipulation and storage. In this paper, first-principles simulations predicted that cation-deficient γ-Ga2O3, having an intrinsic magnetic moment per formula unit cell of about 1 μB, is an inherent candidate to prepare DMS with high Msm. To activate the potential of its magnetism, Fe was introduced as a dopant. A thermostable Fe-doped γ-Ga2O3 thin film with high room temperature (RT) Msm of 5.73 μB/Fe was first obtained using the laser molecular beam epitaxy (L-MBE) technique. While combining theoretical calculations and experimental data, the main source of RT ferromagnetism could be ascribed to the strong ferromagnetic (FM) coupling between Fe ions, p–d orbital overlap of the Fe–O bond, and defects. Our results provide a feasible model for designing high-performance γ-Ga2O3-based DMSs.

Graphical abstract: Fe doping-stabilized γ-Ga2O3 thin films with a high room temperature saturation magnetic moment

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Publication details

The article was received on 24 Oct 2019, accepted on 20 Nov 2019 and first published on 21 Nov 2019


Article type: Paper
DOI: 10.1039/C9TC05823K
J. Mater. Chem. C, 2019, Advance Article

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    Fe doping-stabilized γ-Ga2O3 thin films with a high room temperature saturation magnetic moment

    Y. Huang, A. Gao, D. Guo, X. Lu, X. Zhang, Y. Huang, J. Yu, S. Li, P. Li and W. Tang, J. Mater. Chem. C, 2019, Advance Article , DOI: 10.1039/C9TC05823K

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