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Enabling Superior Stretchable Resistive Switching Memory via Polymer Functionalized Graphene Oxide Nanosheets

Abstract

Constructing portable and wearable electronic devices with mechanical flexibility and electrical reliability requires rational compositional design and structural optimization of the involved functional materials. In order to make resistive switching memory de-vices conformal to the deformation scenario of human muscle and joints, overlapping and intercalated graphene oxide (GO) nanosheets, which are covalently modified with electroactive polymers, are employed as the storage matrix to enable electrical bista-bility and superior stretchable capability through easy charge transfer interaction and inter-nanosheet sliding, respectively. By using 3-thiophenemethanol chemically modi-fied graphene oxide as the template, poly(3-hexylthiophene) (P3HT) chain was in-situ grafted from the surface of GO nanosheets via oxidative graft polymerization to form the switchable GO-P3HT complex, which exhibits non-volatile memory effect with a small switching bias window of 2.95 V and an ON/OFF current ratio exceeding 10^4 in the Al/GO-P3HT/ITO-PDMS structured devices. More importantly, the device per-formance remains stable at the record-high stretching strain level of 50%, promising its potential application in flexible electronics applications.

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Publication details

The article was accepted on 28 Oct 2019 and first published on 31 Oct 2019


Article type: Paper
DOI: 10.1039/C9TC05593B
J. Mater. Chem. C, 2019, Accepted Manuscript

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    Enabling Superior Stretchable Resistive Switching Memory via Polymer Functionalized Graphene Oxide Nanosheets

    J. Hou, B. Zhang, D. Li, Y. Fu, G. Liu and Y. Chen, J. Mater. Chem. C, 2019, Accepted Manuscript , DOI: 10.1039/C9TC05593B

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