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Catalyst-free growth of two-dimensional hexagonal boron nitride few-layers on sapphire for deep ultraviolet photodetectors

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Abstract

Two-dimensional (2D) hexagonal boron nitride (h-BN) is a promising candidate as a supporting substrate, a gate dielectric and a protecting layer for 2D electronic and photonic devices. Transition metals were usually adopted as substrates for the synthesis of 2D h-BN, however, catalyst-free growth of high-quality h-BN on dielectric substrates is still very challenging. Herein, we report the catalyst-free growth of 2D h-BN few-layers on sapphire substrates by ion beam sputtering deposition (IBSD). We find that the h-BN grown under conventional conditions is nonstoichiometric with an excess of B element, resulting in a large number of N vacancy defects and poor crystalline quality. The wafer-scale high quality 2D h-BN layers were synthesized on sapphire by the combination of surface nitridation and N+ sputtering. Furthermore, the 2D h-BN few-layers on sapphire were used to fabricate deep ultraviolet photodetectors, which exhibit better performance in comparison with the devices fabricated by the transferred h-BN.

Graphical abstract: Catalyst-free growth of two-dimensional hexagonal boron nitride few-layers on sapphire for deep ultraviolet photodetectors

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Publication details

The article was received on 21 Sep 2019, accepted on 31 Oct 2019 and first published on 01 Nov 2019


Article type: Paper
DOI: 10.1039/C9TC05206B
J. Mater. Chem. C, 2019, Advance Article

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    Catalyst-free growth of two-dimensional hexagonal boron nitride few-layers on sapphire for deep ultraviolet photodetectors

    M. Gao, J. Meng, Y. Chen, S. Ye, Y. Wang, C. Ding, Y. Li, Z. Yin, X. Zeng, J. You, P. Jin and X. Zhang, J. Mater. Chem. C, 2019, Advance Article , DOI: 10.1039/C9TC05206B

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