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Electrical transport characteristics of chemically robust PDPP-DTT embedded in a bridged silsesquioxane network

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Abstract

Chemical robustness of solution-processed polymer semiconductor films against various chemical solvents plays a critical role in realizing the low-cost fabrication of functional devices in tandem structures. This has been recently obtained by constructing a semi-interpenetrating diphasic polymer network (s-IDPN) comprising a bridged silsesquioxane (BSSQ) framework with an embedded polymer semiconductor. Despite the disruption in the ordering of polymers induced by the BSSQ framework, the electrical transport characteristics of the s-IDPN film turned out to be superior to those of the pristine polymer film. As a case study, we examined the temperature-dependent electrical transport characteristics of poly[2,5-(2-octyldodecyl)-3,6-diketopyrrolopyrrole-alt-5,5-(2,5-di(thien-2-yl)thieno[3,2-b]thiophene)] (PDPP-DTT) embedded in a bridged silsesquioxane (BSSQ) framework. The enhanced transport through PDPP-DTT in the s-IDPN structure is associated with the increased short-range ordering of the polymers embedded in the BSSQ framework and the chemical doping effect provided by the framework, which altogether concentrate the density of states for PDPP-DTT effectively involved in hole transport.

Graphical abstract: Electrical transport characteristics of chemically robust PDPP-DTT embedded in a bridged silsesquioxane network

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Publication details

The article was received on 07 Sep 2019, accepted on 24 Oct 2019 and first published on 30 Oct 2019


Article type: Paper
DOI: 10.1039/C9TC04940A
J. Mater. Chem. C, 2019, Advance Article

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    Electrical transport characteristics of chemically robust PDPP-DTT embedded in a bridged silsesquioxane network

    J. Shin, H. W. Park, S. Kim, J. Yang, J. Kim, H. W. Park, D. H. Kim and M. S. Kang, J. Mater. Chem. C, 2019, Advance Article , DOI: 10.1039/C9TC04940A

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