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High-k polymer materials containing cyclic carbonate as gate dielectrics for application in low-voltage operating organic thin-film transistors

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Abstract

Low-voltage operation in organic thin-film transistors (OTFTs) is desirable for low power applications and portable electronics. Using polymer materials with a high dielectric constant (high-k) as gate dielectrics is an important way to realize low-voltage operating OTFTs. In this work, we synthesized a class of novel copolymers, which exhibit a high-k up to 7–10 depending on the content of cyclic carbonate. These copolymer materials are easily processed into films with a smooth surface topography and without pinholes by simple spin-coating. Moreover, they show excellent insulation properties with low leakage current densities (<7 × 10−7 A cm−2 at 100 MV m−1) and small dielectric loss (<0.03, 102–105 Hz). Meanwhile, cross-linked copolymers also display good flexibility and solvent resistance. To inspect their application prospects in low-voltage operating OTFTs, these copolymer films were employed as gate dielectrics to build p- and n-type OTFTs with C10-DNTT and F16CuPc as active layers, respectively. As a result, our OTFTs exhibit good field-effect properties at low operating voltages below 10 V, with high hole and electron mobility up to 9.7 and 0.005 cm2 V−1 s−1 on average, respectively. Our results indicate a strategy on design of high-k polymer materials as gate dielectrics to pursue low-voltage operating OTFTs.

Graphical abstract: High-k polymer materials containing cyclic carbonate as gate dielectrics for application in low-voltage operating organic thin-film transistors

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Publication details

The article was received on 10 Aug 2019, accepted on 09 Nov 2019 and first published on 12 Nov 2019


Article type: Paper
DOI: 10.1039/C9TC04417E
J. Mater. Chem. C, 2019, Advance Article

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    High-k polymer materials containing cyclic carbonate as gate dielectrics for application in low-voltage operating organic thin-film transistors

    J. Zou, S. Li, H. Wang, W. Wang, Z. Shi, Y. Jiang, Z. Cui and D. Yan, J. Mater. Chem. C, 2019, Advance Article , DOI: 10.1039/C9TC04417E

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