Jump to main content
Jump to site search


Improved switching characteristics of p-type tin monoxide field-effect transistors through Schottky energy barrier engineering

Author affiliations

Abstract

A low on–off current modulation ratio (ION/OFF) in p-type tin monoxide (SnO) field-effect transistors (FETs) is a critical bottleneck hampering their widespread application to transparent complementary metal oxide semiconductors (CMOSs) or monolithic integrated devices. To solve this problem, this study focuses on the source/drain (S/D) contact region. Also, a new perspective on the origin of the high off-current in SnO FETs, an electron injection from the drain electrode into the channel by Fermi-level pinning (FLP) at the off-state, is suggested. In this work, a metal–interlayer–semiconductor (MIS) S/D contact structure is adopted to suppress this adverse electron injection. An ultrathin interlayer (IL) of MIS contact alleviates metal-induced gap state (MIGS) penetration which is a primary cause of the severe FLP. A considerable enhancement is achieved by using the MIS contact structure: the off-current value decreased by approximately 20-fold from 5.1 × 10−8 A to 2.4 × 10−9 A; the ION/OFF value increased 10-fold from 2.7 × 102 to 2.8 × 103, which is interpreted by increased MIS contact-mediated electron SBH. This work presents a new approach that can be easily used alongside previously reported methods to suppress the off-current, providing enhanced switching capability of p-type SnO FETs using a simple method.

Graphical abstract: Improved switching characteristics of p-type tin monoxide field-effect transistors through Schottky energy barrier engineering

Back to tab navigation

Supplementary files

Publication details

The article was received on 08 Aug 2019, accepted on 15 Nov 2019 and first published on 15 Nov 2019


Article type: Paper
DOI: 10.1039/C9TC04345D
J. Mater. Chem. C, 2019, Advance Article

  •   Request permissions

    Improved switching characteristics of p-type tin monoxide field-effect transistors through Schottky energy barrier engineering

    T. Kim, J. Kim, B. Yoo, H. Xu, S. Yim, S. Kim, H. Yu and J. K. Jeong, J. Mater. Chem. C, 2019, Advance Article , DOI: 10.1039/C9TC04345D

Search articles by author

Spotlight

Advertisements