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Using a mixed ionic electronic conductor to build an analog memristive device with neuromorphic programming capabilities

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Abstract

Interface-type oxide-based valence-change memories (VCMs) with analog switching capabilities and memory transience are interesting candidates to be used as artificial synapses for the hardware implementation of artificial neural networks (ANNs) with short-term synaptic dynamics. Here, the mixed ionic-electronic conducting (MIEC) oxide La2NiO4+δ (L2NO4) is used to rationally design a new volatile interface-type valence-change memory based on a tunable p–n junction between a p-type MIEC oxide and an n-type “oxygen-reservoir” oxide. The memory does not require a forming step to trigger memristance and exhibits a highly multilevel and bipolar analog-type change in resistance, which can be continuously varied by over two orders of magnitude. A distinctive two-step memory transience where the resistance of the unbiased device increases before relaxing back to a lower resistance state was measured and has been attributed to the Fick diffusion of oxygen ions, restoring the drift-induced concentration gradients at the Ti/L2NO4 interface.

Graphical abstract: Using a mixed ionic electronic conductor to build an analog memristive device with neuromorphic programming capabilities

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Publication details

The article was received on 21 Jul 2019, accepted on 15 Oct 2019 and first published on 16 Oct 2019


Article type: Communication
DOI: 10.1039/C9TC03972D
J. Mater. Chem. C, 2019, Advance Article

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    Using a mixed ionic electronic conductor to build an analog memristive device with neuromorphic programming capabilities

    K. Maas, E. Villepreux, D. Cooper, C. Jiménez, H. Roussel, L. Rapenne, X. Mescot, Q. Rafhay, M. Boudard and M. Burriel, J. Mater. Chem. C, 2019, Advance Article , DOI: 10.1039/C9TC03972D

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