Antiferromagnetic semiconductor Eu3Sn2P4 with Sn–Sn dimer and crown-wrapped Eu

Abstract

A novel antiferromagnetic semiconductor, Eu₃Sn₂P₄, has been discovered. Single crystals of Eu₃Sn₂P₄ were prepared using the Sn self-flux method. The crystal structure determined by single crystal X-ray diffraction shows that Eu₃Sn₂P₄ crystallizes in the orthorhombic structure with the space group Cmca (Pearson Symbol, oP216). Six Sn–Sn dimers connected by P atoms form a Sn₁₂P₂₄ crown-shaped cluster with a Eu atom located in the center. Magnetization measurements indicate that the system orders antiferromagnetically below a T_N ∼14 K at a low field and undergoes a metamagnetic transition at a high field when T < T_N. The effective magnetic moment is 7.41(3) μ_B per Eu, corresponding to Eu²⁺. The electric resistivity reveals a non-monotonic temperature dependence with non-metallic behavior below ∼60 K, consistent with the band structure calculations. By fitting the data using the thermally activated resistivity formula, we estimate the energy gap to be ∼0.14 eV. Below T_N, the resistivity tends to saturate, suggesting the reduction of charge-spin scattering.