Jump to main content
Jump to site search

Issue 40, 2019
Previous Article Next Article

Antiferromagnetic semiconductor Eu3Sn2P4 with Sn–Sn dimer and crown-wrapped Eu

Author affiliations

Abstract

A novel antiferromagnetic semiconductor, Eu3Sn2P4, has been discovered. Single crystals of Eu3Sn2P4 were prepared using the Sn self-flux method. The crystal structure determined by single crystal X-ray diffraction shows that Eu3Sn2P4 crystallizes in the orthorhombic structure with the space group Cmca (Pearson Symbol, oP216). Six Sn–Sn dimers connected by P atoms form a Sn12P24 crown-shaped cluster with a Eu atom located in the center. Magnetization measurements indicate that the system orders antiferromagnetically below a TN ∼14 K at a low field and undergoes a metamagnetic transition at a high field when T < TN. The effective magnetic moment is 7.41(3) μB per Eu, corresponding to Eu2+. The electric resistivity reveals a non-monotonic temperature dependence with non-metallic behavior below ∼60 K, consistent with the band structure calculations. By fitting the data using the thermally activated resistivity formula, we estimate the energy gap to be ∼0.14 eV. Below TN, the resistivity tends to saturate, suggesting the reduction of charge-spin scattering.

Graphical abstract: Antiferromagnetic semiconductor Eu3Sn2P4 with Sn–Sn dimer and crown-wrapped Eu

Back to tab navigation

Supplementary files

Publication details

The article was received on 01 Jul 2019, accepted on 09 Sep 2019 and first published on 11 Sep 2019


Article type: Paper
DOI: 10.1039/C9TC03557E
J. Mater. Chem. C, 2019,7, 12650-12656

  •   Request permissions

    Antiferromagnetic semiconductor Eu3Sn2P4 with Sn–Sn dimer and crown-wrapped Eu

    J. Blawat, P. Swatek, X. Gui, R. Jin and W. Xie, J. Mater. Chem. C, 2019, 7, 12650
    DOI: 10.1039/C9TC03557E

Search articles by author

Spotlight

Advertisements