Jump to main content
Jump to site search

Issue 34, 2019
Previous Article Next Article

Tunable large-area phase reversion in chemical vapor deposited few-layer MoTe2 films

Author affiliations

Abstract

Crystal phase-engineering of two-dimensional (2D) transition metal dichalcogenides (TMDs) shows remarkable potential for various electronic, optoelectronic and catalytic applications. Here, a few-layer 1T′–2H MoTe2 lateral homo-junction has been obtained by using a facile chemical vapor deposition (CVD) method. In this CVD growth process, the in-plane phase evolution of the MoTe2 film can be dynamically controlled via tuning the contact between the film and Te vapor. Moreover, a local large-scale reversible phase transition of MoTe2 film through heat treatment in a hydrogen atmosphere is reported. During this heat treatment, two types of phase transition from 1T′ to 2H are observed at 500 °C and 750 °C respectively. The mechanism of this reversible phase transition is analysed by first principles calculations. The fabricated 1T′–2H–1T′ homojunction devices demonstrate that the hole mobility of 2H-MoTe2 is comparable with the exfoliated samples. This work in dynamic phase control of MoTe2 provides a pathway to exploring structural transformation of 2D materials and manufacturing novel phase-change electronic devices.

Graphical abstract: Tunable large-area phase reversion in chemical vapor deposited few-layer MoTe2 films

Back to tab navigation

Supplementary files

Article information


Submitted
16 Jun 2019
Accepted
06 Aug 2019
First published
08 Aug 2019

J. Mater. Chem. C, 2019,7, 10598-10604
Article type
Paper

Tunable large-area phase reversion in chemical vapor deposited few-layer MoTe2 films

X. Zhu, A. Li, D. Wu, P. Zhu, H. Xiang, S. Liu, J. Sun, F. Ouyang, Y. Zhou and X. Xiong, J. Mater. Chem. C, 2019, 7, 10598
DOI: 10.1039/C9TC03216A

Social activity

Search articles by author

Spotlight

Advertisements