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Issue 33, 2019
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Top dielectric induced ambipolarity in an n-channel dual-gated organic field effect transistor

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Abstract

The realization of both p-type and n-type operations in a single organic field effect transistor (OFET) is critical for simplifying the design of complex organic circuits. Typically, only p-type or n-type operation is realized in an OFET, while the respective counterpart is either suppressed by charge trapping or limited by the injection barrier with the electrodes. Here we show that only the presence of a top dielectric turns an n-type polymer semiconductor (N2200, Polyera ActiveInk™) into an ambipolar one, as detected from both bottom and top gated OFET operation. The effect is independent of the channel thickness and the top dielectric combinations. Variable temperature transfer characteristics show that both the electrons and holes can be equally transported through the bulk of the polymer semiconductor.

Graphical abstract: Top dielectric induced ambipolarity in an n-channel dual-gated organic field effect transistor

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Supplementary files

Article information


Submitted
30 May 2019
Accepted
05 Aug 2019
First published
06 Aug 2019

J. Mater. Chem. C, 2019,7, 10389-10393
Article type
Paper

Top dielectric induced ambipolarity in an n-channel dual-gated organic field effect transistor

K. Bairagi, E. Zuccatti, F. Calavalle, S. Catalano, S. Parui, R. Llopis, F. Ortmann, F. Casanova and L. E. Hueso, J. Mater. Chem. C, 2019, 7, 10389
DOI: 10.1039/C9TC02912E

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