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Issue 29, 2019
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Gallium oxide solar-blind ultraviolet photodetectors: a review

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Abstract

In recent years, solar-blind ultraviolet (UV) photodetectors have attracted significant attention from researchers in the field of semiconductor devices due to their indispensable properties in the fields of high-temperature event monitoring, anti-terrorism, security and ad hoc network communication. As an important member of the third-generation semiconductors, β-Ga2O3 is considered to be one of the most promising candidates for solar-blind UV detectors due to its ultra-wide band gap (∼4.9 eV), economic efficiency, high radiation resistance and excellent chemical and thermal stability. Herein, we provide a comprehensive review on Ga2O3-based solar-blind UV photodetectors, with a detailed introduction of the developmental process of material growth methods and device manufacturing in the past decade. We classify the currently reported Ga2O3-based solar-blind UV photodetectors (mainly including photoconductive detectors, heterogeneous PN junction detectors and Schottky junction detectors) and summarize their respective superiorities and potentials for improvement. Finally, considering the actual application requirements, we put forward some meaningful suggestions, including energy band engineering and homogeneous epitaxy, for the future development of Ga2O3 material growth and device manufacturing.

Graphical abstract: Gallium oxide solar-blind ultraviolet photodetectors: a review

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Article information


Submitted
17 Apr 2019
Accepted
03 Jun 2019
First published
08 Jun 2019

J. Mater. Chem. C, 2019,7, 8753-8770
Article type
Review Article

Gallium oxide solar-blind ultraviolet photodetectors: a review

J. Xu, W. Zheng and F. Huang, J. Mater. Chem. C, 2019, 7, 8753
DOI: 10.1039/C9TC02055A

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