Issue 21, 2019

Improvement of the hole mobility of SnO epitaxial films grown by pulsed laser deposition

Abstract

Stannous oxide, SnO, is a promising material for practical applications as a p-type transparent oxide semiconductor. However, in its thin-film form, the reported semiconducting properties of SnO are unfortunately insufficient for the development of oxide devices. In this work, we report that the hole mobility of SnO epitaxial films grown by pulsed laser deposition can be improved by reducing the growth temperature. The hole mobility is estimated to be approximately 10 cm2 Vāˆ’1 sāˆ’1 at room temperature, which is nearly four times higher than the one originally reported for epitaxial films fabricated at the conventional growth temperature. In addition, the observed carrier density of the fabricated SnO films is slightly lower compared with that of the ones fabricated at the conventional growth temperature. This suggests that the Sn vacancy formation as a hole carrier dopant is suppressed by the reduction in the growth temperature. This result offers the key for the improvement of the performance of oxide thin-film devices.

Graphical abstract: Improvement of the hole mobility of SnO epitaxial films grown by pulsed laser deposition

Supplementary files

Article information

Article type
Paper
Submitted
08 Mar 2019
Accepted
25 Apr 2019
First published
26 Apr 2019

J. Mater. Chem. C, 2019,7, 6332-6336

Improvement of the hole mobility of SnO epitaxial films grown by pulsed laser deposition

M. Minohara, N. Kikuchi, Y. Yoshida, H. Kumigashira and Y. Aiura, J. Mater. Chem. C, 2019, 7, 6332 DOI: 10.1039/C9TC01297D

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