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Enhanced electrochromic performances and patterning of Ni-Sn oxide films prepared by photosensitive sol-gel method

Abstract

Herein, we report Sn4+ doped Ni-Sn oxide based electrochromic patterned films for high performance display using a new method that combines photochemical etching technique with sol-gel method. The patterning of the films was advanced to the gel film preparation stage by exploiting the ultraviolet photosensitivity of the Ni-Sn precursor sols, thereby effectively avoiding damages to the electrochromic performance of the films during the etching process involved in the traditional patterning technologies such as dry etching, wet etching, etc. The contents of Sn4+ ions, SnO2 nanocrystals, and NiO nanocrystals in the films were controlled by adjusting the molar ratio of Sn:Ni in the photosensitive sol. The modifications to the chemical state and microstructure of NiO by Sn4+ ions and SnO2 nanocrystals effectively promoted the formation of active substances (Ni3+ conversion to Ni2+) and nano-channels for ion (such as OH-) transportation, thereby enhancing the electrochromic properties of NiO films. At the molar ratio of Sn:Ni of 0.2:1, the films achieved the strongest electrochromic performances with optical modulation of 70% at 550 nm, the switching times of 5 s (coloring) and 4 s (bleaching), and the coloration efficiency of 52 cm2/C. The performance of the film remained unchanged even after 2000 coloring-bleaching cycles. Based on the experimental results, we conclude that Ni-Sn oxide patterned films obtained by Sn4+ ions and SnO2 nanocrystals co-doping manifests potential of applications in large display fields such as billboards and indicator boards.

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Publication details

The article was received on 25 Feb 2019, accepted on 03 May 2019 and first published on 04 May 2019


Article type: Paper
DOI: 10.1039/C9TC01075K
J. Mater. Chem. C, 2019, Accepted Manuscript

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    Enhanced electrochromic performances and patterning of Ni-Sn oxide films prepared by photosensitive sol-gel method

    Y. Ren, T. Fang, Y. Gong, X. Zhou, G. Zhao, Y. Gao, J. Jia and Z. Duan, J. Mater. Chem. C, 2019, Accepted Manuscript , DOI: 10.1039/C9TC01075K

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