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Control of hexagonal boron nitride dielectric thickness by single layer etching

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Abstract

This work demonstrates a layer-by-layer etching technique to control the hexagonal boron nitride (h-BN) film thickness with single layer precision. The method involves top layer h-BN deformation via oxygen-radical adsorption and then top layer removal by nitrogen-ion bombardment. An ultimate monolayer h-BN with a smooth surface can be obtained from a thick flake by using the method repeatedly. The mechanism of the single layer h-BN etching is verified using X-ray photoelectron spectroscopy analysis and first principle molecular dynamics. Characterization of the dielectric properties of a thickness-reduced h-BN film shows a desirable low leakage current, large capacitance and high breakdown field properties as a gate dielectric material.

Graphical abstract: Control of hexagonal boron nitride dielectric thickness by single layer etching

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Publication details

The article was received on 15 Feb 2019, accepted on 02 Apr 2019 and first published on 04 Apr 2019


Article type: Paper
DOI: 10.1039/C9TC00896A
Citation: J. Mater. Chem. C, 2019, Advance Article

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    Control of hexagonal boron nitride dielectric thickness by single layer etching

    Z. Ma, C. Prawoto, Z. Ahmed, Y. Xiao, L. Zhang, C. Zhou and M. Chan, J. Mater. Chem. C, 2019, Advance Article , DOI: 10.1039/C9TC00896A

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