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Issue 16, 2019
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Ultrahigh photosensitive organic phototransistors by photoelectric dual control

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Abstract

Organic phototransistors (OPTs) simultaneously introduce photo-induced holes and electrons into the structure of organic field-effect transistors (OFETs). The memory effect of the minority carrier is the origin of the large dark current and slow response during the light on/off switching, which is detrimental to the OPT performance and cycling stability. In this research, we report a novel OPT working mode by photoelectric dual control. After each light switch, the dark current is erased by the gate voltage in depletion mode which remains unchanged during light off; the photocurrent increases by device converting to accumulation mode when the light is on. In this way, high performance OPTs have been obtained in an FBT-Th4(1,4) : PC61BM (5 : 1) composite film with the structure of Si/SiO2/OTS/FBT-Th4(1,4) : PC61BM/Au electrodes, which shows a broad spectral response (maximum values at zero gate bias: R 1.2 × 105 A W−1, gain 3.7 × 105 and D* 3.18 × 1016 Jones) from 410 to 740 nm (calculated from the transfer curve). The best performance with photoelectric dual control under 0.0031 mW cm−2@405 nm is achieved with an on/off current ratio of 1.0 × 106, response 1.6 × 104 A W−1, gain 5.0 × 104, spectral detectivity 2.3 × 1017 Jones and response time sub-40 ms, which makes the phototransistor a very promising component for light sensing applications.

Graphical abstract: Ultrahigh photosensitive organic phototransistors by photoelectric dual control

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Publication details

The article was received on 17 Jan 2019, accepted on 13 Mar 2019 and first published on 18 Mar 2019


Article type: Paper
DOI: 10.1039/C9TC00324J
Citation: J. Mater. Chem. C, 2019,7, 4725-4732

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    Ultrahigh photosensitive organic phototransistors by photoelectric dual control

    T. Han, M. Shou, L. Liu, Z. Xie, L. Ying, C. Jiang, H. Wang, M. Yao, H. Deng, G. Jin, J. Chen and Y. Ma, J. Mater. Chem. C, 2019, 7, 4725
    DOI: 10.1039/C9TC00324J

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