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Vertically aligned ZnO/Ga2O3 core/shell nanowire arrays as self-driven superior sensitivity solar-blind photodetector

Abstract

With large interfacial area, better light absorption ability and well-controlled morphology, vertically arrayed one-dimensional core/shell nanostructures are considered as ideal candidates geometry for high-performance photodetector. Herein, vertically aligned ZnO nanowire arrays were fabricated by vapor phase transport approach and then homogeneously coated by thickness of 20 nm of monoclinic Ga2O3 through sputtering methods, which can be used as a self-driven solar-blind photodetector. This device exhibits excellent photosensitive characteristics with a large Ilight/Idark ratio of 2.64 × 104, ideal detectivity of 6.11 × 1012 cm Hz1/2 W-1, and superior responsivity of 137.9 mA/W under 254 nm light without an exterior power supply, which is much higher than other previously reported self-powered Ga2O3-based photodetectors. What is more, an ultrafast response speed of (rise time ~28.9 μs, fall time ~85.7 μs) is observed in the photodetector by time-resolved photoresponse test. Such excellent performances are assigned to the unique core–shell nanoarchitecture and built-in electric field at ZnO and Ga2O3 junction interface can rapid separate photogenerated carriers. Our work provides a facile yet efficient fabrication procedure to construct self-powered core/shell nanowire arrays solar-blind photodetector for huge application potential in future optoelectronic devices.

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Publication details

The article was received on 09 Jan 2019, accepted on 08 Feb 2019 and first published on 12 Feb 2019


Article type: Paper
DOI: 10.1039/C9TC00134D
Citation: J. Mater. Chem. C, 2019, Accepted Manuscript

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    Vertically aligned ZnO/Ga2O3 core/shell nanowire arrays as self-driven superior sensitivity solar-blind photodetector

    D. You, C. Xu, J. Zhao, W. Zhang, F. Qin, J. Chen and Z. Shi, J. Mater. Chem. C, 2019, Accepted Manuscript , DOI: 10.1039/C9TC00134D

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