Jump to main content
Jump to site search
PLANNED MAINTENANCE Close the message box

Scheduled maintenance work on Wednesday 22nd May 2019 from 11:00 AM to 1:00 PM (GMT).

During this time our website performance may be temporarily affected. We apologise for any inconvenience this might cause and thank you for your patience.

Issue 11, 2019
Previous Article Next Article

Ambipolar transistors based on chloro-substituted tetraphenylpentacene

Author affiliations


Thin-film transistors of halogen-substituted tetraphenylpentacenes are investigated. These compounds exhibit mainly hole transport, but the chlorine compound shows considerably higher performance than the fluorine and bromine compounds. In addition, the chlorine compound shows ambipolar properties, though the hole mobility is four times larger than the electron mobility. These compounds have basically the same crystal structures, but the remarkable halogen dependence is explained by the critical location of the LUMO levels, as well as intermolecular transfers, which sensitively change depending on the stacking geometry. In particular, hole and electron transfer exhibit different periodicity depending on the slip distance along the molecular long axis, and this is related to the appearance of the electron transport properties.

Graphical abstract: Ambipolar transistors based on chloro-substituted tetraphenylpentacene

Back to tab navigation

Supplementary files

Publication details

The article was received on 29 Dec 2018, accepted on 13 Feb 2019 and first published on 14 Feb 2019

Article type: Paper
DOI: 10.1039/C8TC06603E
J. Mater. Chem. C, 2019,7, 3294-3299

  •   Request permissions

    Ambipolar transistors based on chloro-substituted tetraphenylpentacene

    R. Sato, S. Eda, H. Sugiyama, H. Uekusa, T. Hamura and T. Mori, J. Mater. Chem. C, 2019, 7, 3294
    DOI: 10.1039/C8TC06603E

Search articles by author