Issue 18, 2019
From the journal:

Journal of Materials Chemistry C

Temperature-induced transport changes in molecular junctions based on a spin crossover complex†

Lorenzo Poggini, ORCID logo *ab   Mathieu Gonidec, ORCID logo *ab   Ram Kumar Canjeevaram Balasubramanyam,ab   Lorenzo Squillantini,abc   Gilles Pecastaings,d   Andrea Caneschic  and  Patrick Rosa ORCID logo ab  

* Corresponding authors

a CNRS, ICMCB, UMR 5026, F-33600 Pessac, France
E-mail: mathieu.gonidec@icmcb.cnrs.fr, lorenzo.poggini@icmcb.cnrs.fr

b Univ. Bordeaux, ICMCB, UMR 5026, F-33600 Pessac, France

c DIEF – Department Industrial Engineering and INSTM Research Unit, University of Florence, Via S. Marta 3, I-50139 Florence, Italy

d LCPO, CNRS UMR 5629, Université de Bordeaux, Bordeaux-INP, Pessac 33607 Cedex, France

Abstract

This work describes the study of molecular junctions embedding the spin crossover complex [Fe(H2B(pz)2)2(phen)] as an active switchable thin film. In these junctions we observed that the spin state conversion causes a gradual increase in the current density, which may be due to a crossover from direct tunneling to multi-step hopping.

Graphical abstract: Temperature-induced transport changes in molecular junctions based on a spin crossover complex

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Article information

DOI
https://doi.org/10.1039/C8TC06587J
Article type
Communication
Submitted
28 Dec 2018
Accepted
05 Apr 2019
First published
05 Apr 2019

J. Mater. Chem. C, 2019,7, 5343-5347

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Temperature-induced transport changes in molecular junctions based on a spin crossover complex

L. Poggini, M. Gonidec, R. K. Canjeevaram Balasubramanyam, L. Squillantini, G. Pecastaings, A. Caneschi and P. Rosa, J. Mater. Chem. C, 2019, 7, 5343 DOI: 10.1039/C8TC06587J

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