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Issue 13, 2019
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Large area perovskite light-emitting diodes by gas-assisted crystallization

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Abstract

Halide perovskites have been gaining considerable attention recently for use in light-emitting applications, due to their bandgap tunability, color purity and low cost fabrication methods. However, current fabrication techniques limit the processing to small-area devices. Here, we show that a facile N2 gas-quenching technique can be used to make methylammonium lead bromide-based perovskite light-emitting diodes (PeLEDs) with a peak luminance of 6600 cd m−2 and a current efficiency of 7.0 cd A−1. We use this strategy to upscale PeLEDs to large-area substrates (230 cm2) by developing a protocol for slot-die coating combined with gas-quenching. The resulting large area devices (9 devices of each 4.46 cm2 per substrate) with three slot-die coated layers exhibit uniform emission with a peak luminance of 550 cd m−2 and a current efficiency of 2.6 cd A−1. The reasons for the reduced performance and improvement routes are discussed. These results mark a vital step towards scalable manufacturing techniques for PeLEDs.

Graphical abstract: Large area perovskite light-emitting diodes by gas-assisted crystallization

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Article information


Submitted
22 Dec 2018
Accepted
25 Feb 2019
First published
25 Feb 2019

J. Mater. Chem. C, 2019,7, 3795-3801
Article type
Paper

Large area perovskite light-emitting diodes by gas-assisted crystallization

V. Prakasam, D. Tordera, F. Di Giacomo, R. Abbel, A. Langen, G. Gelinck and H. J. Bolink, J. Mater. Chem. C, 2019, 7, 3795
DOI: 10.1039/C8TC06482B

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