Jump to main content
Jump to site search
PLANNED MAINTENANCE Close the message box

Scheduled maintenance work on Wednesday 22nd May 2019 from 11:00 AM to 1:00 PM (GMT).

During this time our website performance may be temporarily affected. We apologise for any inconvenience this might cause and thank you for your patience.



Role of gallium and yttrium dopants on the stability and performance of solution processed indium oxide thin-film transistors

Abstract

We study the effect of gallium and yttrium doping on both the electrical performance and the stability of indium based metal-oxide thin-film transistors (MOTFT) for varied concentrations. As the Ga (Y) content in the In1.0GaxOy (In1.0YxOy) channel material was increased to x = 0.1 the mobility of the MOTFTs degrades by a factor of 4. Thereby the temperature stress stability is clearly enhanced by increasing doping concentration: the onset voltage shift is reduced by a factor of 3 for both In1.0Ga0.1Oy and In1.0Y0.1Oy films compared to indium-oxide TFTs. Also the stability during negative bias stress (NBS) is improved since the strong oxygen binders Ga and Y prevent the desorption of oxygen at the surface. In contrast, the onset voltage shift during positive bias stress (PBS) of doped metal oxide TFTs is higher ΔVon= 12 V for InGaO (100:10) TFTs and ΔVon= 15 V for InYO (100:10) TFTs) compared to intrinsic indium oxide TFTs (ΔVon= 6 V), which could be attributed to the generation of flat trap states at the dielectric/semiconductor interface. Doping with Ga and Y significantly enhances the temperature and NBS stability of TFTs and simultanously degrades the performance. Thus for high-performance MOTFTs a two-layer system consisting of an undoped channel layer and a highly doped capping layer is recommended

Back to tab navigation

Supplementary files

Publication details

The article was received on 12 Dec 2018, accepted on 15 May 2019 and first published on 17 May 2019


Article type: Paper
DOI: 10.1039/C8TC06270F
J. Mater. Chem. C, 2019, Accepted Manuscript

  •   Request permissions

    Role of gallium and yttrium dopants on the stability and performance of solution processed indium oxide thin-film transistors

    F. Jaehnicke, D. V. Pham, C. Bock and U. Kunze, J. Mater. Chem. C, 2019, Accepted Manuscript , DOI: 10.1039/C8TC06270F

Search articles by author

Spotlight

Advertisements