Parylene copolymer gate dielectrics for organic field-effect transistors

Abstract

A double-layer gate dielectric has been used to overcome the drawbacks of organic field-effect transistors with a single-layer gate dielectric. However, the double-layered dielectrics require additional fabrication processes, resulting in increased manufacturing cost and complexity. Here, we present parylene copolymer gate dielectrics fabricated by in situ codeposition of two different families, parylene C and parylene F while maintaining double-layer structures. The effect of the copolymer dielectric on device performance is systematically investigated by evaluating dielectric properties and electrical characteristics. The results show that an organic transistor with a codeposited parylene dielectric exhibits high performance and stable operation without increasing the manufacturing complexity.