An excellent pH-controlled resistive switching memory based on self-colored (C7H7O4N)n extracted from lichen plant
Despite much progress in semiconductor integrated circuit technology for resistive switching memory, it is still hard to implement on the extreme complex neuromorphic networks. Resistive switching memory with multilevel operation and multistate behavior shows its inherent potential in neural networks. Herein, a resistive switching memory device with the structure of Ag/(C7H7O4N)n/F-doped SnO2 (FTO) shows a unique capacitance effect and negative differential resistance (NDR) states, for that, a non-zero-crossing hysteresis loop and multistate resistances in terms of programming and erasing processes is feasible. Uniquely, a pH-controlled behavior is observed during the self-colored switching layer of (C7H7O4N)n for the first time extracted from lichen plant. The chemical potential gradients generating emf in the interfaces are responsible for the effect, and the ions transportation in switching layer and related redox reaction under bias voltage play a dominated role in the multistate memory behaviors and remarkable NDR states. This device provides a promising application in the neuromorphic artificial synapse as well as a selection of the memory states.