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Halide perovskites for resistive random-access memories

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Abstract

Halide perovskite based resistive random-access memory (ReRAM) devices are emerging as a new class of revolutionary data storage devices because their switching material—halide perovskite—has received considerable attention in recent years. Among the electrical characteristics of the material, its current–voltage (IV) hysteresis, which may occur due to defect formation and migration, means that ReRAM can employ halide perovskites as a resistive switching material. Many studies have been conducted on resistive switching materials; however, the investigation of halide perovskites for ReRAM devices is still in the early research stages; therefore, the application of halide perovskites in ReRAM devices is a topic worth studying. Herein, we introduce halide perovskites and their operating mechanism within a ReRAM device. Moreover, recent notable achievements along with future challenges have been reviewed.

Graphical abstract: Halide perovskites for resistive random-access memories

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Publication details

The article was received on 30 Nov 2018, accepted on 07 Jan 2019 and first published on 08 Jan 2019


Article type: Highlight
DOI: 10.1039/C8TC06031B
Citation: J. Mater. Chem. C, 2019, Advance Article

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    Halide perovskites for resistive random-access memories

    H. Kim, J. S. Han, S. G. Kim, S. Y. Kim and H. W. Jang, J. Mater. Chem. C, 2019, Advance Article , DOI: 10.1039/C8TC06031B

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