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Strong interfacial coupling effect of ferroelectric polarization with two-dimensional electron gas in BaTiO3/MgO/AlGaN/GaN/Si heterostructure

Abstract

BaTiO3 (BTO) /MgO/GaN and BTO/MgO/AlGaN/GaN ferroelectric-semiconductor heterostructures with ultrathin MgO buffer layers were constructed by pulsed laser deposition, and interfacial coupling mechanism between ferroelectric polarization of BTO and two-dimensional electron gas (2DEG) at AlGaN/GaN interface was explored for enhancement-mode high electron mobility transistor (HEMT). Upward ferroelectric self-polarization characteristic of BTO integrated on GaN and AlGaN/GaN was induced by the suspect space-charge region at BTO/GaN interface, which was directly confirmed by piezoresponse force microscopy. Thus, 2DEG density at AlGaN/GaN interface was spontaneously reduced by ferroelectric field effect of BTO with upward polarization, and threshold voltage was prominently increased to -0.4 V. More significantly, interfacial coupling correlation between ferroelectric polarization state and 2DEG was established. Via modulating ferroelectric polarization state of BTO, continuous regulation of threshold voltage from -0.4 V to +3.2 V and large counter-clockwise memory window of 2.2 V were demonstrated. BTO/MgO/AlGaN/GaN heterostructure could be a promising candidate for GaN based enhancement-mode HEMT and non-volatile memory devices.

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Supplementary files

Publication details

The article was received on 18 Nov 2018, accepted on 05 Apr 2019 and first published on 08 Apr 2019


Article type: Paper
DOI: 10.1039/C8TC05795H
Citation: J. Mater. Chem. C, 2019, Accepted Manuscript

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    Strong interfacial coupling effect of ferroelectric polarization with two-dimensional electron gas in BaTiO3/MgO/AlGaN/GaN/Si heterostructure

    G. Li, X. Li, J. Zhao, Q. Zhu and Y. Chen, J. Mater. Chem. C, 2019, Accepted Manuscript , DOI: 10.1039/C8TC05795H

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