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Issue 7, 2019
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Comparative passivation effect of ALD-driven HfO2 and Al2O3 buffer layers on the interface chemistry and electrical characteristics of Dy-based gate dielectrics

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Abstract

Herein, a comparative study of the effects of atomic-layer-deposited (ALD) HfO2 and Al2O3 interfacial passivation layers (IPL) on the sputtering-derived HfDyOx (HDO)/Si gate stack has been systematically investigated. X-ray photoemission spectroscopy (XPS) measurements have confirmed that the ALD-driven IPL can effectively eliminate unstable native oxides on the substrates, and the inhibition effect on the formation of a low-k layer by the ALD HfO2 IPL is superior to that of the ALD Al2O3 IPL. Electrical observations have demonstrated that the HDO/HfO2/Si gate stack has improved performance, including a larger permittivity (22.1), negligible hysteresis (0.09 V), a small oxide charge density (∼1011 cm−2) and the smallest gate leakage current density (1.85 × 10−6 A cm−2). Detailed analyses on the leakage current conduction mechanisms (CCMs) for HDO/Si MOS capacitors with different IPLs, measured at room and low temperatures, have been carried out. All the experimental results indicate the potential application of the HDO/HfO2 gate stack as a promising passivation candidate for the future microelectronics devices.

Graphical abstract: Comparative passivation effect of ALD-driven HfO2 and Al2O3 buffer layers on the interface chemistry and electrical characteristics of Dy-based gate dielectrics

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Publication details

The article was received on 14 Nov 2018, accepted on 09 Jan 2019 and first published on 10 Jan 2019


Article type: Paper
DOI: 10.1039/C8TC05736B
Citation: J. Mater. Chem. C, 2019,7, 1955-1965

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    Comparative passivation effect of ALD-driven HfO2 and Al2O3 buffer layers on the interface chemistry and electrical characteristics of Dy-based gate dielectrics

    D. Wang, G. He, L. Hao, J. Gao and M. Zhang, J. Mater. Chem. C, 2019, 7, 1955
    DOI: 10.1039/C8TC05736B

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