Jump to main content
Jump to site search


Comparative passivation effect of ALD-driven HfO2 and Al2O3 buffer layers on the interface chemistry and electrical characteristics of Dy-based gate dielectrics

Abstract

In current work, comparative study about the effect of atomic-layer-deposited (ALD) HfO2 and Al2O3 interfacial passivation layer (IPL) on sputtering-derived HfDyOx (HDO)/Si gate stack has been investigated systematically. X-ray photoemission spectroscopy (XPS) measurements have confirmed that ALD-driven IPL can effectively eliminate the unstable native oxides on the substrates and the inhibition effect on the formation of low-k layer contributed by ALD HfO2 IPL is superior to the ALD Al2O3 IPL. Electrical observations have demonstrated that HDO/HfO2/Si gate stack has demonstrated improved performance, including larger permittivity (22.1), the negligible hysteresis (0.09V), the small oxide charge density (~1011cm-2) and the smallest gate leakage current density (1.85×10-6A/cm2). Detailed analyses on the leakage current conduction mechanisms (CCMs) for HDO/Si MOS capacitors with different IPL, measured in room temperature and low temperature, have been carried out. All the experimental results have indicated its potential application of HDO/HfO2 gate stack as a promising passivation candidate for the coming microelectronics devices.

Back to tab navigation

Publication details

The article was received on 14 Nov 2018, accepted on 09 Jan 2019 and first published on 10 Jan 2019


Article type: Paper
DOI: 10.1039/C8TC05736B
Citation: J. Mater. Chem. C, 2019, Accepted Manuscript
  •   Request permissions

    Comparative passivation effect of ALD-driven HfO2 and Al2O3 buffer layers on the interface chemistry and electrical characteristics of Dy-based gate dielectrics

    D. Wang, G. He, L. Hao, J. Gao and M. Zhang, J. Mater. Chem. C, 2019, Accepted Manuscript , DOI: 10.1039/C8TC05736B

Search articles by author

Spotlight

Advertisements