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Influence of hole transport material ionization energy on the performance of perovskite solar cells

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Abstract

Halide perovskites have shown excellent photophysical properties for solar cell applications which led to a rapid increase in device efficiency. Understanding the charge carrier dynamics within an active perovskite absorber and at its interfaces will be the key to further progress in their development. Here we present a series of fully evaporated devices employing hole transport materials with different ionization energies. The open circuit voltage of the devices, along with their ideality factors, confirms that the former is mainly determined by the bulk and surface recombination in the perovskite, rather than by the energetic offset between the valence band of the perovskite and the highest occupied molecular orbital of the organic transport layers. These results help to further understand the origin of the open circuit potential in perovskite solar cells, which is an important parameter that needs to be improved to further boost power conversion efficiencies.

Graphical abstract: Influence of hole transport material ionization energy on the performance of perovskite solar cells

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Publication details

The article was received on 24 Oct 2018, accepted on 25 Nov 2018 and first published on 27 Nov 2018


Article type: Paper
DOI: 10.1039/C8TC05372C
Citation: J. Mater. Chem. C, 2019, Advance Article
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    Influence of hole transport material ionization energy on the performance of perovskite solar cells

    B. Dänekamp, N. Droseros, D. Tsokkou, V. Brehm, P. P. Boix, M. Sessolo, N. Banerji and H. J. Bolink, J. Mater. Chem. C, 2019, Advance Article , DOI: 10.1039/C8TC05372C

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