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Issue 3, 2019
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Self-powered behavior based on the light-induced self-poling effect in perovskite-based transport layer-free photodetectors

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Abstract

High-performance photodetectors based on organic–inorganic hybrid perovskite single crystals and films have attracted extensive attention recently. In this study, a self-powered behavior was observed in a perovskite photodetector with a special asymmetrical metal/silicon dioxide/perovskite (MOS) structure that lacks the hole and electron transport layers. This self-powered behavior originates from the as-formed built-in electric field within the perovskite film due to the light-induced self-poling effect. The photogenerated carriers are well separated and drift in response to the built-in electric field, resulting in a large photocurrent reaching the nA level without an applied bias. Silicon dioxide acted as a barrier for the carriers, resulting in an ultralow dark current equal to the noise current. This self-powered MOS photodetector exhibited an ION/IOFF ratio of 105 and fast rise and fall characteristics (<30 ms). Our results suggest that exploiting the light-induced self-poling effect in perovskite films offers an alternative for developing reliable self-powered MOS photodetectors.

Graphical abstract: Self-powered behavior based on the light-induced self-poling effect in perovskite-based transport layer-free photodetectors

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Publication details

The article was received on 06 Oct 2018, accepted on 06 Dec 2018 and first published on 10 Dec 2018


Article type: Paper
DOI: 10.1039/C8TC05045G
Citation: J. Mater. Chem. C, 2019,7, 609-616
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    Self-powered behavior based on the light-induced self-poling effect in perovskite-based transport layer-free photodetectors

    T. Pang, R. Jia, Y. Wang, K. Sun, Z. Hu, Y. Zhu, S. Luan and Y. Zhang, J. Mater. Chem. C, 2019, 7, 609
    DOI: 10.1039/C8TC05045G

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