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Synthesis, dielectric properties and application in a thin film transistor device of amorphous aluminum oxide AlxOy using a molecular based precursor route

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Abstract

Amorphous aluminium oxide thin films are accessible by a molecular single source precursor approach employing the coordination compound tris[(diethyl-2-nitromalonato)]aluminium(III) (Al-DEM-NO2). The precursor decomposes by thermal combustion under oxygen without the need of an additional additive into amorphous aluminium oxide films at 350 °C with a very low surface roughness of about 0.3 nm. Solution processing of the precursor results in the formation of smooth, dense and crack-free films, which are converted into amorphous AlxOy thin films after further calcination. Amorphous AlxOy thin films integrated within a capacitor device exhibit dielectric behavior in the temperature range between 200 and 350 °C, with areal capacity values between 41 and 86 nF cm−2 and leakage current densities ranging from 1.7 × 10−7 to 8.9 × 10−10 A cm−2 (at 1 MV cm−1) whereas breakdown voltages increase from 1.82 to 2.79 MV cm−1 in the temperature regime from 200 to 350 °C. The increase in performance at higher temperatures can be attributed to the stepwise conversion of the intermediate aluminium oxo–hydroxy species into aluminium oxide which is confirmed by X-ray photoelectron spectroscopy (XPS).

Graphical abstract: Synthesis, dielectric properties and application in a thin film transistor device of amorphous aluminum oxide AlxOy using a molecular based precursor route

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Publication details

The article was received on 14 Sep 2018, accepted on 18 Dec 2018 and first published on 10 Jan 2019


Article type: Paper
DOI: 10.1039/C8TC04660C
Citation: J. Mater. Chem. C, 2019, Advance Article
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    Synthesis, dielectric properties and application in a thin film transistor device of amorphous aluminum oxide AlxOy using a molecular based precursor route

    N. Koslowski, S. Sanctis, R. C. Hoffmann, M. Bruns and J. J. Schneider, J. Mater. Chem. C, 2019, Advance Article , DOI: 10.1039/C8TC04660C

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