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Issue 1, 2019
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Radiation damage effects in Ga2O3 materials and devices

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The strong bonding in wide bandgap semiconductors gives them an intrinsic radiation hardness. Their suitability for space missions or military applications, where issues of radiation tolerance are critical, is widely known. Especially β-Ga2O3, an ultra-wide bandgap material, is attracting interest for power electronics and solar-blind ultraviolet detection. Beside its superior thermal and chemical stabilities, the effects of radiation damage on Ga2O3 are of fundamental interest in space-based and some terrestrial applications. We review the effect on the material properties and device characteristics of proton, electron, X-ray, gamma ray and neutron irradiation of β-Ga2O3 electronic and optoelectronic devices under conditions relevant to low earth orbit of satellites containing these types of devices.

Graphical abstract: Radiation damage effects in Ga2O3 materials and devices

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Publication details

The article was received on 22 Aug 2018, accepted on 11 Oct 2018 and first published on 19 Oct 2018

Article type: Review Article
DOI: 10.1039/C8TC04193H
J. Mater. Chem. C, 2019,7, 10-24

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    Radiation damage effects in Ga2O3 materials and devices

    J. Kim, S. J. Pearton, C. Fares, J. Yang, F. Ren, S. Kim and A. Y. Polyakov, J. Mater. Chem. C, 2019, 7, 10
    DOI: 10.1039/C8TC04193H

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