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Issue 44, 2019
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Plasma-enhanced atomic-layer-deposited gallium nitride as an electron transport layer for planar perovskite solar cells

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Abstract

Low-temperature deposited gallium nitride (GaN) thin-films have been introduced into planar perovskite solar cells (PSCs) as electron transport layers (ETLs) for the first time. Compact and amorphous n-type GaN layers were uniformly coated on fluorine-doped tin oxide (FTO) glass substrates via plasma-enhanced atomic layer deposition (PEALD) technology, in which an optimized deposition temperature of 280 °C was identified and adopted. The as-prepared GaN thin-films were subsequently employed to fabricate planar PSCs with the device configuration FTO/GaN/perovskite/spiro-OMeTAD/Au. Interestingly, although a conduction-band-minimum (CBM) mismatch of 0.59 eV is found at the interface of the 50-PEALD-cycle GaN/perovskite, a significantly enhanced device efficiency from 10.38% to 15.18% has also been achieved relative to the ETL-free PSCs. Meanwhile, the current–voltage hysteresis and device stability of GaN-based PSCs can be remarkably improved. It is found that the GaN layer can promote the electron extraction and reduce recombination at the FTO/perovskite interface. This work demonstrates the feasibility and potential of GaN films as ETLs in planar PSCs.

Graphical abstract: Plasma-enhanced atomic-layer-deposited gallium nitride as an electron transport layer for planar perovskite solar cells

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Publication details

The article was received on 14 Aug 2019, accepted on 14 Oct 2019 and first published on 16 Oct 2019


Article type: Paper
DOI: 10.1039/C9TA08929B
J. Mater. Chem. A, 2019,7, 25347-25354

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    Plasma-enhanced atomic-layer-deposited gallium nitride as an electron transport layer for planar perovskite solar cells

    H. Wei, J. Wu, P. Qiu, S. Liu, Y. He, M. Peng, D. Li, Q. Meng, F. Zaera and X. Zheng, J. Mater. Chem. A, 2019, 7, 25347
    DOI: 10.1039/C9TA08929B

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