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Thin film oxide-ion conducting electrolyte for near room temperature applications

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Abstract

Stabilized bismuth vanadate thin films are presented here as superior oxide ionic conductors, for application in solid state electrochemical devices operating near room temperature. Widely studied in the 90s in bulk form due to their unbeatable ionic conduction, this family of materials was finally discarded due to poor stability above 500 °C. Here, we however unveil the possibility of using Bi4V1.8Cu0.2O10.7 at reduced temperatures in thin film-based devices, where the material keeps its unmatched conduction properties and at the same time shows good stability over a wide oxygen partial pressure range.

Graphical abstract: Thin film oxide-ion conducting electrolyte for near room temperature applications

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Publication details

The article was received on 15 Jul 2019, accepted on 09 Sep 2019 and first published on 13 Sep 2019


Article type: Communication
DOI: 10.1039/C9TA07632H
J. Mater. Chem. A, 2019, Advance Article
  • Open access: Creative Commons BY-NC license
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    Thin film oxide-ion conducting electrolyte for near room temperature applications

    I. Garbayo, F. Chiabrera, N. Alayo, J. Santiso, A. Morata and A. Tarancón, J. Mater. Chem. A, 2019, Advance Article , DOI: 10.1039/C9TA07632H

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