Jump to main content
Jump to site search


A two-dimensional GeSe/SnSe heterostructure for high performance thin-film solar cells

Author affiliations

Abstract

Based on the first-principles calculations, we demonstrated that a GeSe/SnSe heterostructure has type-II band alignment and a direct band gap, which can effectively prevent the recombination of photogenerated electron–hole pairs. Moreover, the GeSe/SnSe heterostructure also exhibits strong optical absorption intensity, which can reach the order of 105 cm−1. Our predicted photoelectric conversion efficiency (PCE) for the GeSe/SnSe heterostructure reaches 21.47%. We also found that the hole carrier mobility of the GeSe/SnSe heterostructure along the x direction has been significantly improved to 6.42 × 104 cm2 V−1 s−1, which is higher than that of black phosphorus (1 × 104 cm2 V−1 s−1). By applying a vertical external electric field, we found that the band gap and band offset of the GeSe/SnSe heterojunction can be effectively tuned. The revealed type-II band alignment, strong optical absorption, superior PCE and superior hole carrier mobility of the GeSe/SnSe heterostructure imply that this new proposed material has broad application prospects in solar cells.

Graphical abstract: A two-dimensional GeSe/SnSe heterostructure for high performance thin-film solar cells

Back to tab navigation

Supplementary files

Publication details

The article was received on 31 Jan 2019, accepted on 04 Apr 2019 and first published on 05 Apr 2019


Article type: Paper
DOI: 10.1039/C9TA01219B
Citation: J. Mater. Chem. A, 2019, Advance Article

  •   Request permissions

    A two-dimensional GeSe/SnSe heterostructure for high performance thin-film solar cells

    Y. Mao, C. Xu, J. Yuan and H. Zhao, J. Mater. Chem. A, 2019, Advance Article , DOI: 10.1039/C9TA01219B

Search articles by author

Spotlight

Advertisements