Deep eutectic solvent route synthesis of zinc and copper vanadate n-type semiconductors – mapping oxygen vacancies and their effect on photovoltage

Abstract

Ternary metal oxides M₂V₂O_7−δ (M = Zn and Cu) were synthesized by dissolving binary metal oxide precursors in an environmentally benign deep eutectic solvent (DES), which is a eutectic mixture of a hydrogen bond donor and acceptor, followed by annealing in an open crucible. The unique reaction environment provided by the evolved ammonia allows for stabilization of oxygen vacancies and reduced oxidation states of metal ions within an oxide matrix without the need for any post-treatment with flammable reducing agents. According to comprehensive characterization, including X-ray photoelectron spectroscopy (XPS), neutron powder diffraction, and UV-vis spectroscopy, oxygen deficiency is accompanied by reduced oxidation states of metal centers (Cu⁺ or V⁴⁺), resulting in oxides with mixed-valence metal oxidation states. The amount of oxygen vacancies can be tuned by changing the annealing temperature providing control over band gaps of ternary metal oxides and mid-gap states from reduced metal centers. All synthesized vanadates are n-type semiconductors based on negative photovoltages obtained from surface photovoltage spectroscopy (SPS). A decay of the photovoltage with increasing annealing temperatures is attributed to electron trapping and electron/hole recombination at V⁴⁺ and Cu⁺ mid-gap states. This work shows for the first time the impact of oxygen vacancies on the electronic structure of DES synthesized oxides for solar energy conversion applications.