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Narrow optical gap ferroelectric Bi2ZnTiO6 thin films deposited by RF sputtering

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Abstract

This work reports the deposition of single phase Bi2ZnTiO6 thin films onto Pt/Si-based substrates using the RF-sputtering method and the respective structural, morphological, optical and local ferroelectric characterization. The thin film grows in the polycrystalline form with tetragonal P4mm symmetry identified by X-ray diffraction. The lack of a spatial inversion centre was confirmed by the second harmonic generation. A narrow indirect optical gap of 1.48 eV was measured using optical diffuse reflectance. The ferroelectric domain reversal was further demonstrated through piezo-response force microscopy. This work demonstrates a practical method to fabricate the BZT perovskite phase, without resorting to high pressure and temperature conditions necessary to synthetize the bulk form, with outstanding optical and ferroelectric properties.

Graphical abstract: Narrow optical gap ferroelectric Bi2ZnTiO6 thin films deposited by RF sputtering

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Publication details

The article was received on 28 Sep 2018, accepted on 22 Mar 2019 and first published on 25 Mar 2019


Article type: Paper
DOI: 10.1039/C8TA09425J
Citation: J. Mater. Chem. A, 2019, Advance Article

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    Narrow optical gap ferroelectric Bi2ZnTiO6 thin films deposited by RF sputtering

    F. G. Figueiras, J. R. A. Fernandes, J. P. B. Silva, D. O. Alikin, E. C. Queirós, C. R. Bernardo, Y. R. Barcelay, A. Wrzesińska, M. S. Belsley, B. Almeida, P. B. Tavares, A. L. Kholkin, J. A. Moreira and A. Almeida, J. Mater. Chem. A, 2019, Advance Article , DOI: 10.1039/C8TA09425J

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