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Control of anisotropy of a redox-active molecule-based film leads to non-volatile resistive switching memory

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Abstract

Control of the π–π interaction direction in a redox-active π-molecule based film led to the formation of new mechanistic nonvolatile resistive switching memory: a redox-active organic molecule, 2,5,8-tri(4-pyridyl)1,3-diazaphenalene, showed non-volatile bistable resistance states with a high on-off ratio, retention, and endurance only when the molecular orientation was anisotropic. Control experiments using redox-active/redox-inert organic molecules with isotropic/anisotropic molecular orientations implied that the formation of conductive oxidized π–π stacking layers from non-conductive neutral π–π stacking layers is responsible for resistive switching phenomena, indicating new mechanisms such as ReRAM. Our findings will give a comprehensive understanding of electron transport in organic solid materials based on the effects of redox-activity and molecular arrangement, leading to fabrication of a new class of ReRAM based on organic molecules.

Graphical abstract: Control of anisotropy of a redox-active molecule-based film leads to non-volatile resistive switching memory

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Publication details

The article was received on 22 Aug 2019, accepted on 13 Oct 2019 and first published on 17 Oct 2019


Article type: Edge Article
DOI: 10.1039/C9SC04213J
Chem. Sci., 2019, Advance Article
  • Open access: Creative Commons BY license
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    Control of anisotropy of a redox-active molecule-based film leads to non-volatile resistive switching memory

    J. Kim, H. Ohtsu, T. Den, K. Deekamwong, I. Muneta and M. Kawano, Chem. Sci., 2019, Advance Article , DOI: 10.1039/C9SC04213J

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