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Achieving current rectification ratios ≥ 105 across thin films of coordination polymer

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Abstract

Downsizing coordination polymers (CPs) to thin film configurations is a prerequisite for device applications. However, fabrication of thin films of CPs including metal–organic frameworks (MOFs) with reasonable electrical conductivity is challenging. Herein, thin film fabrication of a Cu(II)-CP employing a layer-by-layer method is demonstrated whereby a self-assembled monolayer on Au was used as the functionalized substrate. Growth of the Cu(II)-CP at the solid–liquid interface generated open-metal Cu(II) sites in the thin film which were susceptible to activation by molecular dopant molecules. A significant enhancement in in-plane electrical conductivity and an unheralded cross-plane current rectification ratio (exceeding 105 both at room-temperature and at an elevated temperature) were achieved. Such a remarkable rectification ratio was realized, similar to those of commercial Si rectifier diodes. This phenomenon is attributed to the formation of an electronic heterostructure in the molecularly doped thin film. Molecular doping additionally transformed the interfacial properties of thin films from hydrophilic to highly hydrophobic.

Graphical abstract: Achieving current rectification ratios ≥ 105 across thin films of coordination polymer

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Publication details

The article was received on 29 Jul 2019, accepted on 05 Sep 2019 and first published on 05 Sep 2019


Article type: Edge Article
DOI: 10.1039/C9SC03733K
Chem. Sci., 2019, Advance Article
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    Achieving current rectification ratios ≥ 105 across thin films of coordination polymer

    A. Prasoon, B. Dhara, D. Roy, S. Rana, S. Bhand and N. Ballav, Chem. Sci., 2019, Advance Article , DOI: 10.1039/C9SC03733K

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