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Issue 51, 2019, Issue in Progress
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Tuning the orientation of few-layer MoS2 films using one-zone sulfurization

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Abstract

Few-layer MoS2 films are promising candidates for applications in numerous areas, such as photovoltaics, photocatalysis, nanotribology, lithium batteries, hydro-desulfurization catalysis and dry lubricants, especially due to their distinctive electronic, optical, and catalytic properties. In general, two alignments of MoS2 layers are possible – the horizontal and the vertical one, having different physicochemical properties. Layers of both orientations are conventionally fabricated by a sulfurization of pre-deposited Mo films. So far, the Mo thickness was considered as a critical parameter influencing the final orientation of MoS2 layers with horizontally and vertically aligned MoS2 grown from thin (1 nm) and thick (3 nm) Mo films, respectively. Here, we present a fabrication protocol enabling the growth of horizontally or vertically aligned few-layer MoS2 films utilizing the same Mo thickness of 3 nm. We show that the sulfur vapor is another parameter influencing the growth mechanism, where a sulfurization with higher sulfur vapor pressure leads to vertical MoS2 layers and slow sulfur evaporation results in horizontally aligned layers for a thicker Mo starting layer.

Graphical abstract: Tuning the orientation of few-layer MoS2 films using one-zone sulfurization

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Article information


Submitted
27 Aug 2019
Accepted
13 Sep 2019
First published
19 Sep 2019

This article is Open Access

RSC Adv., 2019,9, 29645-29651
Article type
Paper

Tuning the orientation of few-layer MoS2 films using one-zone sulfurization

M. Sojková, K. Vegso, N. Mrkyvkova, J. Hagara, P. Hutár, A. Rosová, M. Čaplovičová, U. Ludacka, V. Skákalová, E. Majková, P. Siffalovic and M. Hulman, RSC Adv., 2019, 9, 29645
DOI: 10.1039/C9RA06770A

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