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Issue 32, 2019
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Cu2ZnSn(S,Se)4 thin-films prepared from selenized nanocrystals ink

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Abstract

For the first time, CZTS ink was formulated using low-temperature heating up synthesis of NCs. Besides, the influence of powder concentration on the properties of the films was examined. Subsequently, the CZTS films were annealed under a selenium (Se)/argon (Ar) atmosphere at different temperatures to enhance their properties. The influence of selenization temperature on the properties of CZTS films was examined in detail. Structural analysis showed a peak shift towards lower 2θ values for CZTSSe films because of Se incorporation, resulting in larger lattice parameters for CZTSSe than CZTS. As the selenization temperature increases, an increment in the grain size was observed and the band gap was decreased from 1.52 to 1.05 eV. Hall Effect studies revealed a significant improvement in the mobility and carrier concentration with respect to selenization temperatures. Moreover, film selenized at 550 °C exhibited higher photoconductivity as compared to other films, indicating their potential application in the field of low-cost thin-film solar cells.

Graphical abstract: Cu2ZnSn(S,Se)4 thin-films prepared from selenized nanocrystals ink

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Article information


Submitted
09 Apr 2019
Accepted
03 Jun 2019
First published
11 Jun 2019

This article is Open Access

RSC Adv., 2019,9, 18420-18428
Article type
Paper

Cu2ZnSn(S,Se)4 thin-films prepared from selenized nanocrystals ink

R. Aruna-Devi, M. Latha, S. Velumani, J. Santos-Cruz, B. Murali, J.-Á. Chávez-Carvayar, F. A. Pulgarín-Agudelo and O. Vigil-Galán, RSC Adv., 2019, 9, 18420
DOI: 10.1039/C9RA02669J

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