Jump to main content
Jump to site search


Tailoring energy level and surface basicity of metal oxide semiconductors by rare-earth incorporation for high-performance formaldehyde detection

Author affiliations

Abstract

Formaldehyde is one of the most harmful environmental toxins, which should be less than 60 ppb indoors. Although some sensors, based on metal oxide semiconductors, are fabricated for the detection of formaldehyde, the sensing performance is not satisfactory yet. In this work, some rare earth metals are successfully introduced into In2O3 by a simple electrospinning method. The structure, composition and chemical state of the products are investigated by XRD, TEM, EDS, XPS, TPD and a Kelvin probe. And the sensor based on 5Y-doped In2O3 exhibits the highest response to formaldehyde. Moreover, this sensor also shows an ultra-low detection limit (50 ppb), a short response time (1 s) and good selectivity. It is believed that the improved sensing response and selectivity may originate from the elevated Fermi level and the increased surface basicity of In2O3, leading to the increase of chemisorbed oxygen on the surface and adsorption of formaldehyde.

Graphical abstract: Tailoring energy level and surface basicity of metal oxide semiconductors by rare-earth incorporation for high-performance formaldehyde detection

Back to tab navigation

Supplementary files

Publication details

The article was received on 04 Apr 2019, accepted on 15 May 2019 and first published on 16 May 2019


Article type: Research Article
DOI: 10.1039/C9QI00381A
Inorg. Chem. Front., 2019, Advance Article

  •   Request permissions

    Tailoring energy level and surface basicity of metal oxide semiconductors by rare-earth incorporation for high-performance formaldehyde detection

    Y. Zhao, X. Zou, H. Chen, X. Chu and G. Li, Inorg. Chem. Front., 2019, Advance Article , DOI: 10.1039/C9QI00381A

Search articles by author

Spotlight

Advertisements