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Issue 1, 2020
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High-quality epitaxial wurtzite structured InAs nanosheets grown in MBE

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Abstract

In this study, we have grown epitaxial wurtzite structured InAs nanosheets using Au catalysts on a GaAs{111}B substrate by molecular beam epitaxy. Through detailed electron microscopy characterization studies on grown nanosheets, it was found that these wurtzite structured InAs nanosheets grew epitaxially on the GaAs{111}B substrate, with {000[1 with combining macron]} catalyst/nanosheet interfaces and extensive {11[2 with combining macron]0} surfaces. It was anticipated that the epitaxially grown InAs nanosheet can be triggered by a high supersaturation in catalysts, leading to an inclined growth leaving the substrate surface, and driven by the small lattice mismatch between the nanosheets and the substrate, with the orientation relationship of (000[1 with combining macron])InAs//(11[2 with combining macron])GaAs. This study provides insights into achieving epitaxial free-standing III–V nanosheet growth.

Graphical abstract: High-quality epitaxial wurtzite structured InAs nanosheets grown in MBE

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Article information


Submitted
01 Oct 2019
Accepted
13 Nov 2019
First published
14 Nov 2019

Nanoscale, 2020,12, 271-276
Article type
Paper

High-quality epitaxial wurtzite structured InAs nanosheets grown in MBE

Q. Sun, H. Gao, X. Zhang, X. Yao, S. Xu, K. Zheng, P. Chen, W. Lu and J. Zou, Nanoscale, 2020, 12, 271
DOI: 10.1039/C9NR08429K

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