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High-quality Epitaxial Wurtzite Structured InAs Nanosheets Grown in MBE


In this study, we have grown epitaxial wurtzite structured InAs nanosheets using Au catalysts on the GaAs {111}B substrate by molecular beam epitaxy. Through detailed electron microscopy characterizations on grown nanosheets, it was found that these wurtzite structured InAs nanosheets grew epitaxially on the GaAs {111}B substrate, with {000-1} catalyst/nanosheet interfaces and extensive {11-20} surfaces. It was anticipated that that the epitaxially grown InAs nanosheet can be triggered by a high supersaturation in catalysts, leading to an inclined growth leaving the substrate surface, and driven by the small lattice mismatch between the nanosheets and the substrate, with the orientation relationship of (000-1)InAs//(11-2)GaAs. This study provides insights into achieving the epitaxial free-standing III-V nanosheet growth.

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Publication details

The article was received on 01 Oct 2019, accepted on 13 Nov 2019 and first published on 14 Nov 2019

Article type: Paper
DOI: 10.1039/C9NR08429K
Nanoscale, 2019, Accepted Manuscript

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    High-quality Epitaxial Wurtzite Structured InAs Nanosheets Grown in MBE

    Q. Sun, H. Gao, X. Zhang, X. Yao, S. Xu, K. Zheng, P. Chen, W. Lu and J. Zou, Nanoscale, 2019, Accepted Manuscript , DOI: 10.1039/C9NR08429K

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