Jump to main content
Jump to site search


A high performance electroformed single-crystallite VO2 threshold switch

Author affiliations

Abstract

Threshold switches (TSs) are an effective approach for resolving the sneak path problem within a memristor array. VO2 is a promising material for fabricating high-performance TSs. Here we report a single crystal VO2-based TS device with high switching performance. The single crystal monoclinic VO2 channel is obtained by electroforming in a composite vanadium oxide film consisting of VO2, V2O5 and V3O7. The formation mechanism on single crystal VO2 is thoroughly investigated by means of X-ray diffraction, transmission electron microscopy, and Raman spectroscopy. The single crystal VO2-based TS device exhibits better switching performance than the polycrystalline monoclinic VO2 counterpart. The TS device based on a single crystal channel with the ([2 with combining macron]11) orientation exhibits a steep turn-on voltage slope of <0.5 mV dec−1, a fast switching speed of 23 ns, an excellent endurance over 109 cycles, a high Ion/Ioff ratio of 143 and a low sample-to-sample variance. The enhanced switching performance originates from the single crystal feature and specified crystal orientation.

Graphical abstract: A high performance electroformed single-crystallite VO2 threshold switch

Back to tab navigation

Supplementary files

Publication details

The article was received on 28 Sep 2019, accepted on 18 Oct 2019 and first published on 21 Oct 2019


Article type: Paper
DOI: 10.1039/C9NR08364B
Nanoscale, 2019, Advance Article

  •   Request permissions

    A high performance electroformed single-crystallite VO2 threshold switch

    X. Zhou, D. Gu, Y. Li, H. Qin, Y. Jiang and J. Xu, Nanoscale, 2019, Advance Article , DOI: 10.1039/C9NR08364B

Search articles by author

Spotlight

Advertisements