Issue 45, 2019

A high performance electroformed single-crystallite VO2 threshold switch

Abstract

Threshold switches (TSs) are an effective approach for resolving the sneak path problem within a memristor array. VO2 is a promising material for fabricating high-performance TSs. Here we report a single crystal VO2-based TS device with high switching performance. The single crystal monoclinic VO2 channel is obtained by electroforming in a composite vanadium oxide film consisting of VO2, V2O5 and V3O7. The formation mechanism on single crystal VO2 is thoroughly investigated by means of X-ray diffraction, transmission electron microscopy, and Raman spectroscopy. The single crystal VO2-based TS device exhibits better switching performance than the polycrystalline monoclinic VO2 counterpart. The TS device based on a single crystal channel with the ([2 with combining macron]11) orientation exhibits a steep turn-on voltage slope of <0.5 mV dec−1, a fast switching speed of 23 ns, an excellent endurance over 109 cycles, a high Ion/Ioff ratio of 143 and a low sample-to-sample variance. The enhanced switching performance originates from the single crystal feature and specified crystal orientation.

Graphical abstract: A high performance electroformed single-crystallite VO2 threshold switch

Supplementary files

Article information

Article type
Paper
Submitted
28 Sep 2019
Accepted
18 Oct 2019
First published
21 Oct 2019

Nanoscale, 2019,11, 22070-22078

A high performance electroformed single-crystallite VO2 threshold switch

X. Zhou, D. Gu, Y. Li, H. Qin, Y. Jiang and J. Xu, Nanoscale, 2019, 11, 22070 DOI: 10.1039/C9NR08364B

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