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Issue 44, 2019
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Homogeneous platinum diselenide metal/semiconductor coplanar structure fabricated by selective thickness control

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Abstract

For the realization of two-dimensional material-based high-performance electronic devices, the formation of a stable, high-quality metal–semiconductor contact is a key factor. Platinum diselenide (PtSe2), a group-10 transition metal dichalcogenide, is a promising candidate owing to its unique property of layer-dependent semiconductor-to-semimetal transition. Here, a scalable and controllable method utilizing an inductively coupled plasma treatment is reported for selectively controlling the thickness of PtSe2 flakes. The PtSe2 transforms from a semimetal to a semiconductor when the thickness decreases below 3 nm. A field-effect transistor is fabricated based on the homogeneous platinum diselenide metal/semiconductor coplanar structure (metallic PtSe2 as source/drain electrodes and semiconductor PtSe2 as a channel), which demonstrates a low contact resistance of 362 Ω μm and carrier mobility of 150 cm2 V−1 s−1, outperforming the previously reported PtSe2-based devices.

Graphical abstract: Homogeneous platinum diselenide metal/semiconductor coplanar structure fabricated by selective thickness control

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Publication details

The article was received on 17 Sep 2019, accepted on 27 Oct 2019 and first published on 28 Oct 2019


Article type: Communication
DOI: 10.1039/C9NR07995E
Nanoscale, 2019,11, 21068-21073

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    Homogeneous platinum diselenide metal/semiconductor coplanar structure fabricated by selective thickness control

    Y. Yang, S. K. Jang, H. Choi, J. Xu and S. Lee, Nanoscale, 2019, 11, 21068
    DOI: 10.1039/C9NR07995E

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