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Synthesis of low-symmetry 2D Ge(1−x)SnxSe2 alloy flakes with anisotropic optical response and birefringence

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Abstract

Low-symmetry two-dimensional (2D) materials with unique in-plane anisotropy can promote both fundamental science and practical applications in optics, optoelectronics, electronics, and polarization detection. As a member of 2D materials, doping/alloying material systems have gained great attention owing to the tunable bandgap and special properties. However, the in-plane anisotropic optical and electrical properties of these 2D alloy materials have rarely been reported. In this work, low-symmetry 2D Ge(1−x)SnxSe2 (x = 0–1.0) alloy flakes have been synthesized by chemical vapor deposition (CVD) with a bandgap varying from 1.55 eV (GeSe2, x = 0) to 1.90 eV (SnSe2, x = 1.0). Angle-resolved polarized Raman spectroscopy (ARPRS) is used to confirm the in-plane vibrational anisotropy, and azimuth-dependent reflectance difference microscopy (ADRDM) is applied to visualize the in-plane optical anisotropy. Polarization-dependent transmission spectroscopy (PDTS) is carried out to reflect the in-plane absorptional anisotropy and linear dichroism, and birefringence characteristics are also found in the subsequent studies. All of the results indicate the unique in-plane optical anisotropy and birefringence characteristics of the 2D Ge(1−x)SnxSe2 alloy flakes, providing new opportunities for polarization-controlled devices, optical wave plates, and polarizers.

Graphical abstract: Synthesis of low-symmetry 2D Ge(1−x)SnxSe2 alloy flakes with anisotropic optical response and birefringence

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Publication details

The article was received on 11 Sep 2019, accepted on 20 Nov 2019 and first published on 20 Nov 2019


Article type: Communication
DOI: 10.1039/C9NR07820G
Nanoscale, 2019, Advance Article

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    Synthesis of low-symmetry 2D Ge(1−x)SnxSe2 alloy flakes with anisotropic optical response and birefringence

    Y. Liu, M. Wu, Z. Sun, S. Yang, C. Hu, L. Huang, W. Shen, B. Wei, Z. Wang, S. Yang, Y. Ye, Y. Li and C. Jiang, Nanoscale, 2019, Advance Article , DOI: 10.1039/C9NR07820G

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