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Electronic structure and transport properties of 2D RhTeCl: A NEGF-DFT study

Abstract

2D materials are considered as excellent candidates for next-generation electronic and optoelectronic devices. However, the corresponding systems with both proper direct band gap and high carrier mobility are urgently required. Here, a new 2D semiconductor, monolayer RhTeCl, is investigated based on first-principles calculations. Monolayer RhTeCl possesses a direct band gap of 2.16 eV, with a high electron mobility up to 1.5×104 cm2·V-1·s-1. Thus, the monolayer RhTeCl double-gated metal-oxide-semiconductor field-effect transistors (MOSFETs) with the 6-nm gate length are simulated by quantum transport methods. The 6-nm monolayer RhTeCl n-MOSFET displays a steep sub-kT/q switching characteristic and a high on/off ratio (106), which demonstrates a superior gate controlling. Therefore, these promising semiconductor characteristics and device performances of 2D RhTeCl provide new opportunities for novel low power ultra-scaled devices.

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Publication details

The article was received on 05 Sep 2019, accepted on 03 Oct 2019 and first published on 03 Oct 2019


Article type: Communication
DOI: 10.1039/C9NR07684K
Nanoscale, 2019, Accepted Manuscript

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    Electronic structure and transport properties of 2D RhTeCl: A NEGF-DFT study

    H. Qu, S. Guo, W. Zhou, B. Cai, S. Zhang, Y. Huang, Z. Li, X. Chen and H. Zeng, Nanoscale, 2019, Accepted Manuscript , DOI: 10.1039/C9NR07684K

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