Jump to main content
Jump to site search

Electronic structure and transport properties of 2D RhTeCl: A NEGF-DFT study


2D materials are considered as excellent candidates for next-generation electronic and optoelectronic devices. However, the corresponding systems with both proper direct band gap and high carrier mobility are urgently required. Here, a new 2D semiconductor, monolayer RhTeCl, is investigated based on first-principles calculations. Monolayer RhTeCl possesses a direct band gap of 2.16 eV, with a high electron mobility up to 1.5×104 cm2·V-1·s-1. Thus, the monolayer RhTeCl double-gated metal-oxide-semiconductor field-effect transistors (MOSFETs) with the 6-nm gate length are simulated by quantum transport methods. The 6-nm monolayer RhTeCl n-MOSFET displays a steep sub-kT/q switching characteristic and a high on/off ratio (106), which demonstrates a superior gate controlling. Therefore, these promising semiconductor characteristics and device performances of 2D RhTeCl provide new opportunities for novel low power ultra-scaled devices.

Back to tab navigation

Supplementary files

Publication details

The article was received on 05 Sep 2019, accepted on 03 Oct 2019 and first published on 03 Oct 2019

Article type: Communication
DOI: 10.1039/C9NR07684K
Nanoscale, 2019, Accepted Manuscript

  •   Request permissions

    Electronic structure and transport properties of 2D RhTeCl: A NEGF-DFT study

    H. Qu, S. Guo, W. Zhou, B. Cai, S. Zhang, Y. Huang, Z. Li, X. Chen and H. Zeng, Nanoscale, 2019, Accepted Manuscript , DOI: 10.1039/C9NR07684K

Search articles by author