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Direct Imaging of the Nitrogen Rich Edge in Monolayer Hexagonal Boron Nitride and Its Band Structure Tuning

Abstract

Identification of edge atoms and tracking the edge structure evolution of two-dimensional (2D) crystals at the scale of individual atom is critical to understand the edge-dominated properties and behaviors response to the external field stimulus. Here, the direct imaging of edge configuration atom-by-atom for the monolayer hexagonal boron nitride (h-BN) is demonstrated by aberration-corrected transmission electron microscopy. The tracking of edge atoms’ arrangement reveals that nitrogen atom terminated zigzag type dominates along the edge, naturally leading the nitrogen rich (N-rich) feature in the margin area while keeping the stoichiometric interior of a h-BN monolayer. Two approaches including both top-down fabrication and bottom-up growth are proposed to obtain such novel h-BN flakes with an N-rich ratio larger than 1% when the size shrinks down to the threshold of 25 nm. Further density functional theory calculation shows a new bandgap of ~3 eV is created by the N-rich fact, and the h-BN transfers to a n-type semiconductor by self-doping. The results call for the attention of ultra-small h-BN islands used in intriguing 2D electronic devices with a function of photoresponse to visible light.

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Supplementary files

Publication details

The article was received on 20 Aug 2019, accepted on 09 Oct 2019 and first published on 10 Oct 2019


Article type: Paper
DOI: 10.1039/C9NR07147D
Nanoscale, 2019, Accepted Manuscript

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    Direct Imaging of the Nitrogen Rich Edge in Monolayer Hexagonal Boron Nitride and Its Band Structure Tuning

    P. Liu, H. Tian, W. Windl, G. Gu, G. Duscher, Y. Wu, M. Zhao, J. Guo, B. Xu and L. Liu, Nanoscale, 2019, Accepted Manuscript , DOI: 10.1039/C9NR07147D

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