Nanoscale plasmonic TM-pass polarizer integrated on silicon photonics
Transverse electric (TE)-pass polarizers integrated in silicon-on-insulator photonic circuits, based on hybrid plasmonic absorption, have been widely discussed as a key component for application in information and communication technologies. Nevertheless, its complement transverse magnetic (TM)-pass polarizer is still lacking due to the TM nature of plasmonic modes. Here, we experimentally demonstrate a nanoscale TM-pass polarizer based on TE-polarized plasmonic absorption using a periodic metal nanoparticle chain integrated on a silicon waveguide. Currently, the measured extinction ratio is 23 dB/μm and the insertion loss is 2.4 dB/μm at the central wavelength 1.59 μm in a device with a footprint of 630 nm (0.4λ). This polarization selective absorption is analyzed using dispersion curve and transmission near-field scanning optical microscopy. The nanophotonic device completes integrated polarizer based on plasmonic absorption and provides the necessary footprint for high density integration in photonic integrated circuits.