Issue 43, 2019

Nanoscale plasmonic TM-pass polarizer integrated on silicon photonics

Abstract

Transverse electric (TE)-pass polarizers integrated in silicon-on-insulator photonic circuits, based on hybrid plasmonic absorption, have been widely discussed as a key component for applications in information and communication technologies. Nevertheless, the complementary transverse magnetic (TM)-pass polarizer has not been developed due to the TM nature of plasmonic modes. Here, we experimentally demonstrate a nano-scale TM-pass polarizer based on TE-polarized plasmonic absorption using a periodic metal nanoparticle chain integrated on a silicon waveguide. Currently, the measured extinction ratio is 23 dB μm−1 and the insertion loss is 2.4 dB μm−1 at the central wavelength of 1.59 μm, in a device with a footprint of 630 nm (0.4λ). This polarization-selective absorption is analyzed using dispersion curves and transmission near-field scanning optical microscopy. The nanophotonic device completes an integrated polarizer based on plasmonic absorption and provides the necessary footprint for high density integration in photonic integrated circuits.

Graphical abstract: Nanoscale plasmonic TM-pass polarizer integrated on silicon photonics

Supplementary files

Article information

Article type
Paper
Submitted
12 Aug 2019
Accepted
02 Oct 2019
First published
03 Oct 2019

Nanoscale, 2019,11, 20685-20692

Nanoscale plasmonic TM-pass polarizer integrated on silicon photonics

B. Wang, S. Blaize and R. Salas-Montiel, Nanoscale, 2019, 11, 20685 DOI: 10.1039/C9NR06948H

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